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IXFN80N60P3
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXFN) Outline
g fs
C iss
C oss
C rss
R Gi
V DS = 10V, I D = 40A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate Input Resistance
55
90
13.1
1240
5.0
1.0
S
nF
pF
pF
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 40A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 40A
48
25
87
8
190
56
48
ns
ns
ns
ns
nC
nC
nC
(M4 screws (4x) supplied)
R thJC
0.13 ° C/W
R thCS
Source-Drain Diode
0.05
° C/W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
80
320
1.5
A
A
V
t rr
Q RM
I RM
I F = 40A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1.4
13.0
250
ns
μ C
A
Note
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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